rfcm3080 40 - 1003mhz gaas/gan pus h pull module rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity tm , powerstar?, polaris tm total radio tm and ultimateblue tm are trademarks of rfmd, llc< bletooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, t rademarks and registered trademarks are the properly of their respective owners. ?200 9 , rf micro devices, inc. ds130711 7628 thorndike road, greensboro, nc 27409 - 9421 C for sales or technical support, contact rfmd at (+1) 336 - 678 - 5570 or sales - support@rfmd.com 1 of 6 package: 9 pin, 11 .0 mm x 8.5 mm x 1.375mm features ? excellent linearity ? superior return loss performance ? extremely low distortion ? optimal reliability ? low noise ? unconditionally stable under all terminations ? 27.5 db min. gain at 1003m hz ? 27 0ma max. at 24vdc applications ? 40mhz to 1003 mhz catv amplifier systems functional block diagram product description t he rf cm308 0 is a push pull amplifier smd module. the part employs gaas mesfet, gaas phemt and gan hemt die and is operated from 40 mhz to 1003 mhz. it provides excellent lin earity and superior return loss performance with low noise and optimal reliability. dc current of the device can be externally adjusted for optimum distortion performance vs. power consumption over a wide range of output level. dc current of the device can be externally adjusted for optimum distortion performance ver sus power consumption over a wide range of output level. ordering information rfcm30 8 0sb sample bag 5 pieces rfcm30 8 0sq sample bag 25 pieces rfcm30 8 0sr 7 reel with 100 pieces rfcm30 8 0tr7 7 reel with 500 pieces rfcm30 8 0tr13 13 reel with 1000 pieces rfcm30 8 0pcba - 410 fully assembled evaluation board rfcm30 8 0pck - 410 fully assembled evaluation board with sample pack optimum technology matching? applied gaas hbt sige bicmos gaas phemt gan hemt gaas mesfet si bicmos si cmos rf mems ingap hbt sige hbt si bjt ldmos rfcm3080
rfcm3080 40 - 1003mhz gaas/gan pus h pull module rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity tm , powerstar?, polaris tm total radio tm and ultimateblue tm are trademarks of rfmd, llc< bletooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, t rademarks and registered trademarks are the properly of their respective owners. ?200 9 , rf micro devices, inc. ds130711 7628 thorndike road, greensboro, nc 27409 - 9421 C for sales or technical support, contact rfmd at (+1) 336 - 678 - 5570 or sales - support@rfmd.com 2 of 6 absolute maximum ratings parameter rating unit rf input voltage (single tone) 7 0 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base tempera ture - 30 to +100 c 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, ntsc frequency ra ster: 55.25mhz to 547.25mhz, +46 dbmv flat output level, plus 75 digital channels, - 6db offset relative to the equivalent analog carrier.composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta.composite triple beat (ctb) - the ctb parameter is defined by the ncta.cross modulation (xmod) - cross modulation (x mod) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car - rier being tested.carrier to intermodulation noise (cin) - the cin parameter is defined by ansi/scte 17 (test procedure for carrier to noise). parameter specification unit condition min. typ. max. overall v+ = 24v; tmb=30c; zs=zl=75 power gain 2 7 .0 db f=50mhz 2 7 . 5 28 . 5 2 9 .0 db f=1003mhz slope [1] 0.5 1.0 2.0 db f=40mhz to 1003mhz flatness of frequency response 0.8 db f=40mhz to 1003mhz input return loss - 20 db f=40mhz to 320mhz - 18 db f=320mhz to 640mhz - 17 db f=640mhz to 870mhz - 16 db f=870mhz to 1003mhz output return loss - 20 db f=40mhz to 320mhz - 19 db f=320mhz to 640mhz - 18 db f=640mhz to 870mhz - 17 db f=870mhz to 1003mhz noise figure 4 . 5 5. 0 db f=50mhz to 1003mhz total current consumption (dc) 250 .0 270 .0 ma distortion data 40mhz to 550mhz v+ = 24v; tmb=30c; zs=zl=75 ctb - 70 - 65 dbc v o =46 dbmv flat , 79 analog channels plus 75 digital channels ( - 6db offset ) [2] xmod - 6 3 - 58 dbc v o =46 dbmv flat , 79 analog channels plus 75 digital channels ( - 6db offset ) [2] cso - 7 5 - 66 dbc v o =46 dbmv flat , 79 analog channels plus 75 digital channels ( - 6db offset ) [2] cin 65 69 db v o =46 dbmv flat , 79 analog channels plus 75 digital channels ( - 6db offset ) [2]
rfcm3080 40 - 1003mhz gaas/gan pus h pull module rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity tm , powerstar?, polaris tm total radio tm and ultimateblue tm are trademarks of rfmd, llc< bletooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, t rademarks and registered trademarks are the properly of their respective owners. ?200 9 , rf micro devices, inc. ds130711 7628 thorndike road, greensboro, nc 27409 - 9421 C for sales or technical support, contact rfmd at (+1) 336 - 678 - 5570 or sales - support@rfmd.com 3 of 6 current a djustment using resistor r 5 the rfcm3080 can be operated over a wide range of current to provide maximum required performance with minimum current consum ption. changing the value of resistor r 5 on application circuit allows a variation of the current betw een 20 0 ma and 255ma (typ.). within the range of current between 200 ma and 255 ma gain (s21) change is less than 0. 4 db and noise figure change is less than 0.1db. test condition: v += 24v; t mb =30c; z s =z l =75 ; vo=46dbmv flat, 79 analog channels plus 75 digital channels ( - 6db offset) 190 200 210 220 230 240 250 260 270 10 100 1000 10000 100000 current [ma] resistor r5 [ ] current vs. resistor r5 190 200 210 220 230 240 250 260 0 1 2 3 4 5 6 7 current [ma] ctb and cin degradation [db] distortion degradation over device current, typical values ctb cin device current [ma], typical r 5 [ ] 255 open 2 50 9100 2 45 4300 2 40 2700 23 5 1800 2 30 1200 2 25 820 2 20 560 2 15 390 210 240 205 130 200 39 v+ = 24v; t mb =30c; z s =z l =75
rfcm3080 40 - 1003mhz gaas/gan pus h pull module rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity tm , powerstar?, polaris tm total radio tm and ultimateblue tm are trademarks of rfmd, llc< bletooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, t rademarks and registered trademarks are the properly of their respective owners. ?200 9 , rf micro devices, inc. ds130711 7628 thorndike road, greensboro, nc 27409 - 9421 C for sales or technical support, contact rfmd at (+1) 336 - 678 - 5570 or sales - support@rfmd.com 4 of 6 application circuit evaluation board layout note: the ground plane of the rfcm308 0 module should be soldered on to a board equipped with as m any thermal vias as possible. underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module dc power ( up to 6.5 watts ) . in any case the module backside temperature should not exceed 100c. c 8 4 . 7 n f r 5 c 6 0 . 5 p f c 3 0 . 5 p f r 4 1 0 c 2 4 . 7 n f c 1 0 d n i d 2 m m 3 z 5 v 6 t 1 r 1 1 0 k d 1 t g l 3 4 - 3 3 a c 1 4 n 7 c 7 4 . 7 n f u 1 r f c m 3 0 8 0 1 2 3 4 9 8 7 6 5 f b 1 b e a d 6 0 t 3 r f x f 0 0 0 7 t 1 r f x f 0 0 0 6 t 2 r f x f 0 0 0 8 v + g n d r f i n r f o u t c 9 d n i c 1 2 d n i c 1 1 0 . 5 p f c 1 4 d n i c 1 3 d n i d 3 t q p 2 0 0 0 0 2 r 7 0 r 8 0 r 9 0 r 1 0 0 r 1 1 0 r 1 2 0
rfcm3080 40 - 1003mhz gaas/gan pus h pull module rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity tm , powerstar?, polaris tm total radio tm and ultimateblue tm are trademarks of rfmd, llc< bletooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, t rademarks and registered trademarks are the properly of their respective owners. ?200 9 , rf micro devices, inc. ds130711 7628 thorndike road, greensboro, nc 27409 - 9421 C for sales or technical support, contact rfmd at (+1) 336 - 678 - 5570 or sales - support@rfmd.com 5 of 6 component chart component type value qty designator comment capacitor 4.7nf 4 c1, c 2 , c 7 , c 8 capacitor dni 5 c 9 , c 10 , c12, c 13 , c 14 optional to improve matching in application capacitor 0.5pf 3 c 3 , c 6, c11 resistor 10k 10 60 @ 100mhz 1 d1 zener diode mm3z5v6t1g 1 d2 esd protection diode tqp20 0 002 1 d3 transformer rfxf0006 1 t1 transformer rfxf0008 1 t2 transformer rfxf000 7 1 t3 dut rfcm30 8 0 1 u1 package drawing dimensions in millimeters
rfcm3080 40 - 1003mhz gaas/gan pus h pull module rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity tm , powerstar?, polaris tm total radio tm and ultimateblue tm are trademarks of rfmd, llc< bletooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, t rademarks and registered trademarks are the properly of their respective owners. ?200 9 , rf micro devices, inc. ds130711 7628 thorndike road, greensboro, nc 27409 - 9421 C for sales or technical support, contact rfmd at (+1) 336 - 678 - 5570 or sales - support@rfmd.com 6 of 6 pin configuration pin function description 1 rf in (+) rf amp positive input 2 5.6v v+ supply voltage 5.6v 3 ?dc adjust current adjustment 4 rf in ( - ) rf amp negative input 5 rf out ( - ) rf amp negative output 6 gnd ground 7 24 v v+ supply voltage 24 v 8 gnd ground 9 rf out (+ ) rf amp positive output 2 3 6 9 8 g n d i d c a d j u s t r f i n + r f i n - r f o u t - r f o u t + 5 . 6 v v + 2 4 v v + g n d 7 4 5 1 g n d
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